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| DSEP 15-06B HiPerFREDTM Epitaxial Diode with soft recovery Preliminary data IFAV = 15 A VRRM = 600 V = 25 ns trr A C VRSM V 600 VRRM V Type TO-220 AC C 600 DSEP 15-06B A C (TAB) A = Anode, C = Cathode, TAB = Cathode D4 Symbol IFRMS IFAVM IFSM EAS Conditions TC = 130C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive; IAS = 1 A; L = 100 H L = 20 mH VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 35 15 110 0.1 20 0.1 -55...+175 175 -55...+150 A A Features A G G mJ mJ A C C C W Nm g G G G G IAR TVJ TVJM Tstg Ptot Md Weight G International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25C mounting torque typical 95 0.4...0.6 2 Applications G G G G Symbol IR x Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 15 A; TVJ = 150C TVJ = 25C Characteristic Values typ. max. 100 0.5 1.55 2.52 1.6 0.5 A mA V V K/W K/W ns A G G G G VF y RthJC RthCH t rr IRM Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages G IF = 1 A; -di/dt = 100 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 25 A; -diF/dt = 100 A/s TVJ = 100C 25 30 2.6 G G Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see pages D4 - 85-86 (c) 2001 IXYS All rights reserved 1-1 147 IXYS reserves the right to change limits, test conditions and dimensions. |
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